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Silicon avalanche photodiode detector circuit for Nd:YAG laser scattering.

机译:用于Nd:YaG激光散射的硅雪崩光电二极管检测器电路。

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A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N = 1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low frequency background light component. The background signal is amplified with a computer controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Z(sub eff) measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis. 4 refs., 5 figs.

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