A solution-processed cobalt-doped nickel oxide for high efficiency inverted type perovskite solar cells

摘要

Optimal interfaces play an important role in determining the efficiency of perovskite solar cells. Despite nickel oxide is a promising hole transport material in perovskite solar cells, electrical conductivity and surface properties of pristine nickel oxide are not satisfactory for achieving high efficiency perovskite solar cells. Here, we demonstrate that cobalt doping significantly improves not only the electrical conductivity but also the interfaces of nickel oxide hole transport layer. As a result, the hole extraction, transport and collection properties are significantly improved in the device using cobalt-doped nickel oxide as a hole transport layer. Also, it reveals that cobalt-doped nickel oxide reduces the trap-sites of interfaces of perovskite/hole transport layer, leading to suppressed charge recombination in the devices. As a result, the devices using cobalt-doped nickel oxide achieve as high as 17.52% without severe hysteresis, which is attributed to better band alignment, superior hole extraction and decreased resistance, as compared to pristine nickel oxide-based devices.