p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

摘要

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.