P-TYPE SEMICONDUCTING NICKEL OXIDE AS AN EFFICIENCY-ENHANCING ANODAL INTERFACIAL LAYER IN BULK HETEROJUNCTION SOLAR CELLS.

摘要

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material