机译:寄生参数对SiC MOSFET的开关特性和布局设计注意事项的影响
Nanjing Univ Aeronaut & Astronaut, Ctr More Elect Aircraft Power Syst, Nanjing, Jiangsu, Peoples R China;
Nanjing Univ Aeronaut & Astronaut, Ctr More Elect Aircraft Power Syst, Nanjing, Jiangsu, Peoples R China;
Nanjing Univ Aeronaut & Astronaut, Ctr More Elect Aircraft Power Syst, Nanjing, Jiangsu, Peoples R China;
Nanjing Univ Aeronaut & Astronaut, Ctr More Elect Aircraft Power Syst, Nanjing, Jiangsu, Peoples R China;
Layout design; Parasitic capacitance; Parasitic inductance; Silicon Carbide (SiC);
机译:Si IGBT + SiC MOSFET混合开关的实用设计注意事项:寄生互连的影响,成本和电流比优化
机译:PCB电源布局设计对SiC MOSFET开关瞬态性能的影响
机译:布局和寄生因素决定了高电流桥中的MOSFET开关特性
机译:汽车DC-DC转换器中寄生电感影响下SiC MOSFET的开关性能和EMI信号的研究
机译:1.2 kV 4H-SiC平面栅极功率MOSFET的设计,分析和优化,用于改进的高频切换
机译:4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
机译:设计参数对短路的影响SiC功率MOSFET的坚固性