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机译:使用倾斜束临界尺寸扫描电子显微镜应对1×节点中的FinFET计量挑战
GlobalFoundries, 400 Stonebreak Road Extension, Malta, New York 12020, United States;
Applied Materials Inc., 2911 Route 9 Suite 3, Malta, New York, United States;
Applied Materials Inc., 2911 Route 9 Suite 3, Malta, New York, United States;
GlobalFoundries, 400 Stonebreak Road Extension, Malta, New York 12020, United States;
GlobalFoundries, 400 Stonebreak Road Extension, Malta, New York 12020, United States;
GlobalFoundries, 400 Stonebreak Road Extension, Malta, New York 12020, United States;
Applied Materials Inc., 2911 Route 9 Suite 3, Malta, New York, United States;
Applied Materials Israel, 9 Oppenheimer Street, Rehovot 76705, Israel;
Applied Materials Israel, 9 Oppenheimer Street, Rehovot 76705, Israel;
Applied Materials Israel, 9 Oppenheimer Street, Rehovot 76705, Israel;
Applied Materials Israel, 9 Oppenheimer Street, Rehovot 76705, Israel;
Applied Materials Israel, 9 Oppenheimer Street, Rehovot 76705, Israel;
critical dimension scanning electron microscope; tilt beam; three-dimensional metrology; FinFET; 1× node; gate height; fin height; three-dimensional metal gate; hybrid metrology;
机译:整体计量方法:利用散射测量,临界尺寸-原子力显微镜和临界尺寸扫描电子显微镜的混合计量
机译:临界尺寸扫描电子显微镜和光学临界尺寸的混合计量共同优化
机译:临界尺寸扫描电子显微镜计量学中的实验分辨率测量
机译:使用倾斜光束CD-SEM解决1X节点中的FinFET计量挑战
机译:超高真空低温扫描隧道显微镜及其在高临界转变温度超导体和准一维有机导体中的应用。
机译:在扫描电子显微镜中进行尺寸测量的电子成像模式的比较
机译:使用扫描电子显微镜的半导体尺寸计量
机译:扫描电子显微镜计量中的关键问题