首页>
外国专利>
METHOD FOR REDUCING CHARGE IN CRITICAL DIMENSION-SCANNING ELECTRON MICROSCOPE METROLOGY
METHOD FOR REDUCING CHARGE IN CRITICAL DIMENSION-SCANNING ELECTRON MICROSCOPE METROLOGY
展开▼
机译:减少临界尺寸扫描电子显微镜计量中的电荷的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods and compositions are provided for reducing or eliminating charge buildup during scanning electron microscopy (SEM) metrology of a critical dimension (CD) in a structure produced by lithography. An under layer is utilized that comprises silicon in the construction of the structure. When the lithography structure comprising the silicon-comprising under layer is scanned for CDs using SEM, the under layer reduces or eliminates charge buildup during SEM metrological observations.
展开▼