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Advanced electric-field scanning probe lithography on molecular resist using active cantilever

机译:使用有源悬臂在分子抗蚀剂上进行高级电场扫描探针光刻

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摘要

The routine "on demand" fabrication of features smaller than 10 nm opens up new possibilities for the realization of many devices. Driven by the thermally actuated piezoresistive cantilever technology, we have developed a prototype of a scanning probe lithography (SPL) platform which is able to image, inspect, align, and pattern features down to the single digit nanoregime. Here, we present examples of practical applications of the previously published electric-field based current-controlled scanning probe lithography. In particular, individual patterning tests are carried out on calixarene by using our developed table-top SPL system. We have demonstrated the application of a step-and-repeat SPL method including optical as well as atomic force microscopy-based navigation and alignment. The closed-loop lithography scheme was applied to sequentially write positive and negative tone features. Due to the integrated unique combination of read-write cycling, each single feature is aligned separately with the highest precision and inspected after patterning. This routine was applied to create a pattern step by step. Finally, we have demonstrated the patterning over larger areas, over existing topography, and the practical applicability of the SPL processes for lithography down to 13-nm pitch patterns. To enhance the throughput capability variable beam diameter electric field, current-controlled SPL is briefly discussed.
机译:小于10 nm的特征的常规“按需”制造为实现许多器件开辟了新的可能性。在热致动压阻悬臂技术的驱动下,我们开发了一种扫描探针光刻(SPL)平台的原型,该平台能够对特征进行成像,检查,对准和图案化,直至单位个数的纳米级。在这里,我们介绍了以前发布的基于电场的电流控制扫描探针光刻的实际应用示例。特别是,使用我们开发的台式SPL系统对杯芳烃进行了单独的图案测试。我们已经演示了逐步重复SPL方法的应用,包括基于光学以及原子力显微镜的导航和对齐方式。应用闭环光刻方案依次写入正和负色调特征。由于读写循环的集成独特组合,每个单独的特征都以最高的精度分别对齐,并在构图后进行检查。应用此例程逐步创建图案。最后,我们展示了在较大区域,现有地形上的图案以及SPL工艺在低至13 nm间距图案的光刻中的实际适用性。为了提高可变光束直径电场的吞吐能力,简要讨论了电流控制的SPL。

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  • 来源
    《Journal of microanolithography, MEMS, and MOEMS》 |2015年第3期|031202.1-031202.11|共11页
  • 作者单位

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany,Nano Analytik GmbH, Ehrenbergstrasse 11, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany,Nano Analytik GmbH, Ehrenbergstrasse 11, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany,Nano Analytik GmbH, Ehrenbergstrasse 11, Ilmenau 98693, Germany;

    Nano Analytik GmbH, Ehrenbergstrasse 11, Ilmenau 98693, Germany;

    Ilmenau University of Technology, Institute of Micro and Nanoelectronics, Department of Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, Gustav-Kirchhoff-Strasse 1, Ilmenau 98693, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanolithography; scanning probe lithography; molecular glass resist; calixarene resist; self-actuating piezoresistive cantilever; active cantilever;

    机译:纳米光刻;扫描探针光刻;分子玻璃抗蚀剂杯芳烃抗蚀剂;自致动压阻悬臂;主动悬臂;

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