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Gradient-based joint source polarization mask optimization for optical lithography

机译:基于梯度的光刻光刻联合源偏振掩模优化

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摘要

Source and mask optimization (SMO) has emerged as a key resolution enhancement technique for advanced optical lithography. Current SMO, however, keeps the polarization state fixed, thus limiting the degrees of freedom during the optimization procedure. To overcome this limitation, pixelated gradient-based joint source polarization mask optimization (SPMO) approaches, which effectively extend the solution space of the SMO problem by introducing polarization variables, are developed. First, the SPMO framework is formulated using an integrative and analytic vector imaging model that is capable of explicitly incorporating the polarization angles. Subsequently, two optimization methods, namely simultaneous SPMO (SISPMO) and sequential SPMO (SESPMO) are developed, both of which exploit gradient-based algorithms to solve for the optimization problem. In addition, a postprocessing method is applied to reduce the complexity of the optimized polarization angle pattern for improving its manufacturability. Illustrative simulations are presented to validate the effectiveness of the proposed algorithms. The simulations also demonstrate the superiority of the SESPMO over SISPMO in computational efficiency and improvement of image fidelity.
机译:源和掩模优化(SMO)已经成为高级光学光刻的一项关键分辨率增强技术。但是,当前的SMO保持极化状态固定,从而限制了优化过程中的自由度。为了克服这一限制,开发了基于像素化梯度的联合源极化掩模优化(SPMO)方法,该方法通过引入极化变量有效地扩展了SMO问题的解空间。首先,SPMO框架是使用能够明确纳入偏振角的集成和解析矢量成像模型制定的。随后,开发了两种优化方法,即同时SPMO(SISPMO)和顺序SPMO(SESPMO),这两种方法都利用基于梯度的算法来解决优化问题。另外,应用后处理方法来减少优化的偏振角图案的复杂性以提高其可制造性。提出了说明性仿真以验证所提出算法的有效性。仿真还证明了SESPMO优于SISPMO在计算效率和图像保真度方面的优势。

著录项

  • 来源
    《Journal of microanolithography, MEMS, and MOEMS》 |2015年第2期|023504.1-023504.20|共20页
  • 作者单位

    Beijing Institute of Technology, School of Optoelectronics, Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, 5 South ZhongGuanCun Street, Beijing 100081, China;

    Beijing Institute of Technology, School of Optoelectronics, Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, 5 South ZhongGuanCun Street, Beijing 100081, China;

    Beijing Institute of Technology, School of Optoelectronics, Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, 5 South ZhongGuanCun Street, Beijing 100081, China;

    Beijing Institute of Technology, School of Optoelectronics, Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, 5 South ZhongGuanCun Street, Beijing 100081, China;

    Beijing Institute of Technology, School of Optoelectronics, Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, 5 South ZhongGuanCun Street, Beijing 100081, China;

    University of Delaware, Department of Electrical and Computer Engineering, Newark, Delaware 19716, United States;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    optical lithography; source polarization mask optimization; computational lithography; vector imaging model;

    机译:光学光刻;源偏振掩模优化;计算光刻;矢量成像模型;

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