首页> 外文期刊>Journal of mechanics of materials and structures >EFFECT OF INTERCONNECT LINEWIDTH ON THE EVOLUTION OF INTRAGRANULAR MICROCRACKS DUE TO SURFACE DIFFUSION IN A GRADIENT STRESS FIELD AND AN ELECTRIC FIELD
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EFFECT OF INTERCONNECT LINEWIDTH ON THE EVOLUTION OF INTRAGRANULAR MICROCRACKS DUE TO SURFACE DIFFUSION IN A GRADIENT STRESS FIELD AND AN ELECTRIC FIELD

机译:互连线宽对梯度应力场和电场中由于表面扩散引起的颗粒内微裂纹演化的影响

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Based on the weak formulation for combined surface diffusion and evaporation/condensation, we derive the governing equation of the finite-element induced both by stressmigration and electromigration. The corresponding program is developed for simulating the evolution of the intragranular microcracks caused by surface diffusion in copper interconnect lines under a gradient stress field and an electric field. ull Unlike previously published works, this paper is focused on how the interconnect linewidth influences the microcrack evolution. Numerical analysis results show that there exists a critical value of the linewidth $hat h_c$. When $hat h&hat h_c$, the microcrack will drift along the direction of the electric field by a stable form. When $hat hlehat h_c$, it will split into two small microcracks and the decrease of the linewidth is beneficial for the microcrack splitting. Besides, the critical linewidth increases with the increase of the electric field and the aspect ratio, and the critical linewidth first increases and then decreases with the increase of the stress gradient. That is, the increase of the electric field and the aspect ratio is beneficial for the microcrack to split. In addition, all of the critical values of the electric field, the aspect ratio and the stress gradient decrease with the decrease of the linewidth. The microcrack has a stronger dependence on the linewidth when $hat h&25$.
机译:基于表面扩散和蒸发/凝结相结合的弱公式,推导了应力迁移和电迁移引起的有限元控制方程。开发了相应的程序来模拟在梯度应力场和电场作用下铜互连线表面扩散引起的晶粒内微裂纹的演化。 null与以前发表的作品不同,本文着重研究互连线宽如何影响微裂纹的发展。数值分析结果表明,线宽$ hat h_c $存在一个临界值。当$ hat h& hat h_c $时,微裂纹将以稳定形式沿电场方向漂移。当$ hat h le hat h_c $时,它将分裂为两个小的微裂纹,线宽的减小有利于微裂纹的分裂。此外,临界线宽随着电场和纵横比的增加而增加,并且随着应力梯度的增加,临界线宽先增加然后减小。即,电场和纵横比的增加对于微裂纹的分裂是有利的。另外,电场的所有临界值,纵横比和应力梯度都随着线宽的减小而减小。当$ hat h <25 $时,微裂纹对线宽的依赖性更大。

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