机译:MOD工艺对Pb(Zr0.48Ti0.52)O3薄膜中过量Pb结构和电性能的影响
State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Metallurgy Chinese Academy of Sciences;
Shanghai Institute of Nuclear Research Chinese Academy of Sciences;
State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Metallurgy Chinese Academy of Sciences;
State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Metallurgy Chinese Academy of Sciences;
State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Metallurgy Chinese Academy of Sciences;
State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Metallurgy Chinese Academy of Sciences;
机译:MOD工艺对Pb(Zr_(0.48)Ti_(0.52))O_(3)薄膜结构和电学性质的影响
机译:通过MOD工艺制备的过量PbO掺杂Pb(Zr_(0.48)Ti_(0.52)O_3薄膜的结构和电学性能。
机译:脉冲激光沉积的Bapbo3导电薄膜的结构和电性能及其对PBZR0.52TI0.48O3 / BAPBO3异质结构的铁电性能的影响
机译:过量PbO对La改性0.75Pb(Mg1 / 3Nb2 / 3)O3-0.25PbTiO3电光透明陶瓷光学性能和微观结构的影响
机译:溅射沉积外延(1-x)Pb(Mg1 / 3Nb2 / 3)O3-- xPbTiO3薄膜的结构性质关系。
机译:(111)取向Pb(Mg1 / 3NB2 / 3)O3-PBZRO3-PBTIO3薄膜的结构和电性能用于高频换能器应用
机译:通过MOD工艺制备的过量PbO掺杂Pb(Zr 0.48Ti0.52)O3薄膜的结构和电学性质
机译:a-sITE-aND /或B-sITE-mODIFIED pBZRTIO3材料和(pB,sR,Ca,Ba,mG)(ZR,TI,NB,Ta)O3薄膜,具有铁电随机存取存储器和高性能薄膜微处理器的实用性