Polytypism of SiC and interfacial structure in SiCp/Al composites

摘要

In the present work, the polytypism of SiC and the interfacial structure between SiC and Al were investigated using X-ray diffraction (XRD) and high resolution transmission electron microscopy (HREM). It was approved that 15R could be juxtaposed with 6H stacking sequences in the same SiC reinforcement and a structural transformation zone was also observed. The Al4C3 compound can nucleate on SiC at the SiC/Al interface with the growth orientation parallel to the C axis of SiC. Mechanisms for the observed phenomena were also discussed in detail.