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Honeycomb structure, Si-SiC based composite material, method for manufacturing honeycomb structure, and method for manufacturing Si-SiC based composite material

机译:蜂窝结构,Si-SiC基复合材料,蜂窝结构的制造方法以及Si-SiC基复合材料的制造方法

摘要

A honeycomb structure 20 is provided with a partition portion 22 constituting a plurality of cells 23 serving as flow paths of a fluid. This honeycomb structure 20 includes electrode portions 32 which are disposed as parts of the partition portion 22 and which have a SiC phase, an oxide phase containing a Si oxide, an Al oxide, and an alkaline-earth metal oxide, and a metal phase containing metal Si and metal Al, where the proportion of metal Al relative to the total amount of metal Si and metal Al is 0.001 percent by mole or more and 20 percent by mole or less and a heat generation portion 34 which is a part of the partition portion 22 and which has a volume resistivity higher than that of the electrode portion 32. This honeycomb structure is obtained by forming an impregnation base material containing metal Si and metal Al and an alkaline-earth metal compound on a part of the surface of a honeycomb base material having a SiC phase and an oxide phase containing a Si oxide and impregnating metal Si and metal Al into pores of the honeycomb base material through heating in an inert gas atmosphere.
机译:蜂窝结构体20设置有分隔部22,该分隔部22构成用作流体的流路的多个隔室23。该蜂窝结构体20包括电极部分32,该电极部分32布置为分隔部分22的一部分并且具有SiC相,包含Si氧化物,Al氧化物和碱土金属氧化物的氧化物相,以及包含Si氧化物的金属相。金属Si和金属Al,其中金属Al相对于金属Si和金属Al的总量的比例为0.001摩尔%以上且20摩尔%以下,并且发热部分34为分隔壁的一部分部分22的体积电阻率高于电极部分32。通过在蜂窝的一部分表面上形成包含金属Si和金属Al以及碱土金属化合物的浸渍基材而获得该蜂窝结构。具有SiC相和包含Si氧化物的氧化物相的基材,并且通过在惰性气体气氛中加热而将金属Si和金属Al浸渍到蜂窝基材的孔中。

著录项

  • 公开/公告号EP2505571A3

    专利类型

  • 公开/公告日2013-10-16

    原文格式PDF

  • 申请/专利权人 NGK INSULATORS LTD.;

    申请/专利号EP20120159150

  • 申请日2012-03-13

  • 分类号C04B35/565;C04B38/00;C04B35/573;C04B35/63;B01D46/00;B01D46/24;C04B41/00;C04B41/85;C04B41/50;B01J35/04;

  • 国家 EP

  • 入库时间 2022-08-21 16:32:18

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