...
首页> 外文期刊>Journal of Materials Science >Dependence of the structural and the electrical properties on the Hg/Te flux-rate ratios for Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers
【24h】

Dependence of the structural and the electrical properties on the Hg/Te flux-rate ratios for Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

机译:CdTe缓冲层上生长的Hg0.7 Cd0.3 Te外延层的结构和电学性质对Hg / Te通量比的影响

获取原文
获取原文并翻译 | 示例
           

著录项

  • 来源
    《Journal of Materials Science》 |2004年第3期|1147-1149|共3页
  • 作者单位

    Department of Physics and Quantum-functional Semiconductor Research Center Dongguk University;

    Department of Physics and Quantum-functional Semiconductor Research Center Dongguk University;

    Department of Physics and Quantum-functional Semiconductor Research Center Dongguk University;

    Advanced Semiconductor Research Center Division of Electrical and Computer Engineering Hanyang University;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号