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机译:CdTe缓冲层上生长的Hg0.7 sub> Cd0.3 sub> Te外延层的结构和电学性质对Hg / Te通量比的影响
Department of Physics and Quantum-functional Semiconductor Research Center Dongguk University;
Department of Physics and Quantum-functional Semiconductor Research Center Dongguk University;
Department of Physics and Quantum-functional Semiconductor Research Center Dongguk University;
Advanced Semiconductor Research Center Division of Electrical and Computer Engineering Hanyang University;
机译:退火对在CdTe缓冲层上生长的Hg0.7 sub> Cd0.3 sub> Te外延层的微观结构和光学性质的影响
机译:CdTe缓冲层上生长的原位退火Hg_(0.7)Cd_(0.3)Te外延层的微观结构和电学性质对退火温度和Hg细胞通量的依赖性
机译:原位热退火对CdTe缓冲层上生长的Hg0.7Cd0.3Te外延层的结构,光学和电学性质的影响
机译:MBE生长的掺砷Hg_(1-x)Cd_xTe外延层的电激活和电性能
机译:通过高压化学气相沉积和ZGP单晶的高压化学气相沉积和振动研究生长的氮化铟外膜的光学和结构性
机译:氢化物气相外延生长在AlN纳米图案蓝宝石模板上的AlGaN外延层的结构和应力特性
机译:利用水平滑块生长LpE的HgCdTe外延层的特性
机译:mBE生长的砷掺杂Hg(1-x)Cd(x)Te外延层的电活化和电学性质