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首页> 外文期刊>Journal of Materials Science >Atomic and electronic structure of [0001]/( $bar{1}bar{2}30$ ) Σ7 symmetric tilt grain boundary in ZnO bicrystal with linear current-voltage characteristic
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Atomic and electronic structure of [0001]/( $bar{1}bar{2}30$ ) Σ7 symmetric tilt grain boundary in ZnO bicrystal with linear current-voltage characteristic

机译:具有线性电流-电压特性的ZnO双晶中[0001] /($ bar {1} bar {2} 30 $)Σ7对称倾斜晶界的原子和电子结构

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摘要

The atomic and electronic structures of [0001]/( $bar{1}bar{2}30$ ) Σ 7 symmetric tilt grain boundary in an undoped ZnO bicrystal were investigated by high-resolution transmission electron microscopy (HRTEM) and first-principles calculations. HRTEM imaging and atomistic calculations revealed that the grain boundary was composed of at least two types of structural units. It was also found that one of the structural units has two threefold-coordinated atoms per a unit and the other has two fivefold-coordinated atoms. First-principles calculations indicated that these atoms with various coordination numbers do not form deep unoccupied electronic states in the band gap of ZnO, which is in consistency with a linear current-voltage characteristic observed for the bicrystal with the Σ 7 boundary.
机译:通过高分辨率透射电子显微镜(HRTEM)和第一性原理研究了未掺杂ZnO双晶中[0001] /($ bar {1} bar {2} 30 $)Σ7对称倾斜晶界的原子和电子结构。计算。 HRTEM成像和原子计算表明,晶界由至少两种类型的结构单元组成。还发现,一个结构单元每单元具有两个三重配位的原子,另一个结构单元具有两个五重配位的原子。第一性原理计算表明,这些具有各种配位数的原子不会在ZnO的带隙中形成深的空位电子态,这与在Σ7边界的双晶所观察到的线性电流-电压特性相一致。

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  • 来源
    《Journal of Materials Science》 |2005年第12期|3059-3066|共8页
  • 作者单位

    Department of Advanced Materials Science The University of Tokyo;

    Institute of Engineering Innovation The University of Tokyo;

    Institute of Engineering Innovation The University of TokyoDepartment of Materials Science and Engineering Kyoto University;

    Department of Advanced Materials Science The University of Tokyo;

    Department of Advanced Materials Science The University of Tokyo;

    Institute of Engineering Innovation The University of Tokyo;

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