Fabrication of spintronic material Cd1-x Mnx Te using stack deposition

摘要

Spintronic materials, employing the spin of carriers as a medium for sending information beside their charges, have drawn significant attention of scientists since the last decade for their uses in multifunctional and energy saving devices. Manganese doped cadmium telluride, Cd1-xMnxTe, is reported as a material for spin control under the influence of magnetic field due to the presence of manganese.