Stress-impedance effects in sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films fabricated by Microelectromechanical Systems technique

摘要

Sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films with a serpentine structure have been realized on silicon cantilever by Microelectromechanical Systems technique, and the stress-impedance (SI) effects have been studied in the frequency range of 1–40 MHz. Experimental results show that the values of SI ratio increase with the deflection and a large SI ratio of ?24.1% at 5 MHz with the average tension stress 69.9 MPa and strain 0.048% is obtained in the sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films, which shows attractive for the applications of strain sensors.