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Stress-impedance effects in sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films

机译:夹层FeCuNbCrSiB / Cu / FeCuNbCrSiB薄膜中的应力阻抗效应

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摘要

Sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films with a meander structure have been realized on silicon cantilever by Microelec-tromechanical Systems (MEMS), and the stress-impedance (SI) effects have been studied in the frequency range of 1-40 MHz. Experimental results show that the values of SI ratio increase with the deflection, and a large SI ratio of -24.5 percent at 5 MHz with the deflection of 2 mm is obtained in the sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films, and the strain gauge factor is 1255 at 5 MHz, and is larger than the conventional metal strain gauge and semiconductor strain gauge, which is attractive for the applications of strain sensors.
机译:通过微机电系统(MEMS)在硅悬臂上实现了具有曲折结构的三明治式FeCuNbCrSiB / Cu / FeCuNbCrSiB薄膜,并在1-40 MHz的频率范围内研究了应力阻抗(SI)效应。实验结果表明,夹层的FeCuNbCrSiB / Cu / FeCuNbCrSiB薄膜中,SI比值随挠度的增加而增大,在5 MHz下挠度为2 mm时,SI比值大为-24.5%,应变系数为1255在5 MHz时,比传统的金属应变仪和半导体应变仪大,这对应变传感器的应用很有吸引力。

著录项

  • 来源
    《Materials Letters》 |2006年第22期|p.2554-2557|共4页
  • 作者

    Ji-An Chen; Wen Ding; Yong Zhou;

  • 作者单位

    National Key Laboratory of Nano/Micro Fabrication Technology', Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Institute of Micro and Nano Science and Technology', Shanghai Jiaotong University, Shanghai 200030, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

    Stress-impedance; Sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films; MEMS;

    机译:应力阻抗;夹层FeCuNdacion / Cu / FeCuNdacion膜;MEMES;

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