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首页> 外文期刊>Journal of Materials Science >Influence of fabrication parameters on crystallization, microstructure, and surface composition of NbN thin films deposited by rf magnetron sputtering
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Influence of fabrication parameters on crystallization, microstructure, and surface composition of NbN thin films deposited by rf magnetron sputtering

机译:制备参数对射频磁控溅射沉积NbN薄膜的结晶,微结构和表面组成的影响

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摘要

In this work NbN thin films have been grown by magnetron rf sputtering of a δ-NbN (99.99%) target. In particular, the influence of certain fabrication parameters (substrate temperature, power supplied to the target or additional N2 flux in the preparation chamber) on the crystallization, microstructure, and surface composition of the deposited films have been studied. The films have been characterized by X-ray diffraction (XRD) at grazing angle in the θ–2θ configuration, scanning electron microscopy (SEM), wavelength dispersive spectrometry (WDS), and X-ray photoelectron spectroscopy (XPS). XRD results show that films grown at a substrate temperature of 573 K and a power supply applied to the target of 300 W present the same crystalline structure of the target while films grown at these temperature and power supply conditions plus the additional presence of N2 during fabrication, grow highly textured along the plane (200). SEM results indicate that the films present columnar growth and a high homogeneity. WDS analysis shows that films grown at 573 K and 300 W are stoichiometric. XPS shows a complex surface composition of the films most external 5 nm, indicating the presence of niobium nitride (NbN x ), niobium oxy-nitride (NbN x O y ), and niobium oxide (Nb2O5).
机译:在这项工作中,已通过磁控管射频溅射δ-NbN(99.99%)靶材生长了NbN薄膜。特别是,某些制造参数(基底温度,提供给目标的功率或制备室中额外的N 2 助熔剂)对沉积膜的结晶度,微观结构和表面组成的影响研究。这些膜的特征是在掠射角为θ-2θ的情况下进行X射线衍射(XRD),扫描电子显微镜(SEM),波长色散光谱(WDS)和X射线光电子光谱(XPS)。 XRD结果表明,在573 K的基板温度下生长的薄膜和施加至300 W靶材的电源呈现出与靶材相同的晶体结构,而在这些温度和电源条件下生长的薄膜加上N 2 在制造过程中,沿平面(200)生长高度纹理。 SEM结果表明该膜呈现柱状生长并且具有高均匀性。 WDS分析表明,在573 K和300 W下生长的薄膜是化学计量的。 XPS显示最外层5 nm的薄膜具有复杂的表面组成,表明存在氮化铌(NbN x ),氧氮化铌(NbN x O y )和氧化铌(Nb 2 O 5 )。

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