Study on silicon carbide nanowires produced from carbon blacks and structure of carbon blacks

摘要

Silicon carbide nanowires were produced from carbon blacks at 1473 K and their microstructure was characterized by TEM, X-ray diffraction, FTIR and Raman spectroscopy. Nanowires of uniform diameters, the smallest averaging 10 nm, and narrow size distribution were obtained from graphitized carbon blacks, and their morphology depends on the properties of carbon black pecursors. High concentration of stacking faults and twins was detected. In addition to silicon carbide nanowires, a silicon carbide layer, about 20 nm thick, was formed on the surface of carbon black aggregates. The interior of the aggregates did not react and analysis of the data showed that it is composed of a mixture of amorphous carbon and small graphitic crystallites. The small lateral sizes of these crystallites remain unchanged during the graphitization process which is limited to the outer layer of the aggregates.