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Synthesis, characterization, and temperature-dependent electronic properties of ZnO nanorods using CBD techniques

机译:使用CBD技术的ZnO纳米棒的合成,表征和温度依赖性电子性能

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摘要

High-quality and partially oriented ZnO nanorod films were synthesized by chemical bath deposition on top of a ZnO sol-gel spin-coating seed layer deposited on glass substrates. Two different ratios (0.625 and 6.25) of hexam-ethylenetetramine to zinc acetate were considered for the synthesis of the ZnO nanorod films and their optical, structural and electronic properties were studied. The ZnO nanorod films showed the wurtzite structure with a crystallite size about 50-55 nm, a dislocation density in the range of 10~(15) lines-m~(-2) and a strain in the range of 10~(-3). Energy dispersive spectroscopy and photoluminescence measurements indicated the existence of oxygen vacancies in the films. The ZnO nanorod films showed a bandgap energy about 3.24 eV. From pho-toluminescence results, an intense ultraviolet excitonic emission band was observed in the films. The films resulted with a carrier concentration in the range of 10~(15) and 10~(16) cm~(-3). From impedance spectroscopy measurements, a noticeable temperature-dependent electronic conductivity was observed, related probably to the nanostructured morphology of the films. In both films it was observed that the electronic conductivity decreased in the intermediate temperature region with the increment of temperature, probably due to chemisorption or desorption phenomena. But the electronic conductivity in the low and the high-temperature regions obeyed the grain boundary carriertrapping model with the increment of the temperature, showing in both regions an activation energy close to 0.6 eV, attributed to the appearance of trap states due to the chemisorption of oxygen at the grain boundaries of the ZnO nanorods.
机译:通过化学浴沉积在沉积在玻璃基板上的ZnO溶胶 - 凝胶旋涂种子层顶部合成高质量和部分取向的ZnO纳米棒膜。考虑了两种不同比例(0.625和6.25)六乙烯乙胺对乙酸锌的合成,研究了它们的光学,结构和电子性质。 ZnO纳米孔膜显示紫立塔结构,具有约50-55nm的微晶尺寸,位错密度在10〜(15)次 - m〜(2)的范围内,在10〜(-3的范围内)。能量分散光谱和光致发光测量表明薄膜中氧空位的存在。 ZnO Nanorod薄膜显示出约3.24eV的带隙能量。从Pho-溶解结果中,在薄膜中观察到强烈的紫外线激发发射带。薄膜导致载体浓度在10〜(15)和10〜(16 )cm〜(-3)的范围内。从阻抗光谱测量,观察到明显的温度依赖性电子电导率,相关的可能与薄膜的纳米结构形态相关。在这两种膜中,观察到,在中间温度区域中,随着温度的增量,电子电导率降低,可能是由于化学吸附或解吸现象。但是,低温和高温区域的电子电导率遵循了晶粒边界承载模型的温度递增,在两个区域中显示出接近0.6eV的激活能量,这归因于陷阱状态的出现由于化学吸取ZnO纳米棒的晶界处的氧气。

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  • 来源
    《Journal of materials science》 |2021年第7期|8944-8957|共14页
  • 作者单位

    Centro de Investigation en Genoa Aplicada y Tecnologia Avanzada Instituto Politecnico Nacional Calzada Legaria 694 Col. Irrigation Alcaldia Miguel Hidalgo 11500 Ciudad de Mexico Mexico;

    Centro de Investigation en Genoa Aplicada y Tecnologia Avanzada Instituto Politecnico Nacional Calzada Legaria 694 Col. Irrigation Alcaldia Miguel Hidalgo 11500 Ciudad de Mexico Mexico;

    Laboratorio de Sintesis de Materiales-Facultad de Ciencias Fisico-Matemdticas-Universidad Autonoma de Sinaloa Ciudad Universitaria s/n 80000 Culiacan Sinaloa Mexico;

    Centro de Investigation en Ciencia Aplicada y Tecnologia Avanzada Catedras Conacyt/Instituto Politecnico National Calzada Legaria 694 Col. Irrigation Alcaldia Miguel Hidalgo 11500 Ciudad de Mexico Mexico;

    Centro de Investigation en Ciencia Aplicada Y Tecnologia Avanzada Estancia Postdoctoral/Instituto Politecnico National Calzada Legaria 694 Col. Irrigacidn Del. Miguel Hidalgo 11500 Ciudad de Mexico Mexico;

    Centro de Nanociencias y Micro y Nanotecnologias Unidad Profesional Adolfo Lopez Mateos Instituto Politecnico Nacional Luis Enrique Erro s/n Col. Zacatenco 07738 Ciudad de Mexico Mexico;

    Centro de Investigation en Genoa Aplicada y Tecnologia Avanzada Instituto Politecnico Nacional Calzada Legaria 694 Col. Irrigation Alcaldia Miguel Hidalgo 11500 Ciudad de Mexico Mexico;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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