机译:Ni-Doped Bi_(0.15)SB_(1.5)TE_3单晶:热电,拓扑绝缘体和光电子的潜在功能材料
CSIR-National Physical Laboratory Dr. K.S. Krishnan Marg New Delhi 110012 India Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India;
CSIR-National Physical Laboratory Dr. K.S. Krishnan Marg New Delhi 110012 India Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India;
CSIR-National Physical Laboratory Dr. K.S. Krishnan Marg New Delhi 110012 India Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India;
CSIR-National Physical Laboratory Dr. K.S. Krishnan Marg New Delhi 110012 India;
机译:Bi_(0.5)Sb_(1.5)Te_3单晶的生长电荷纯度和完善度对其热电性能的影响
机译:ZnTe-掺杂Bi_(0.5)SB_(1.5)TE_3单晶的制备和热电性能
机译:拓扑绝缘体Bi_(1.5)Sb_(0.5)Te_(1.8)Se_(1.2)的单晶纳米薄片器件中以表面为主的传输的指示
机译:Bi_(1.5)SB_(0.5)TE_(1.7)SE_(1.3)拓扑绝缘体上的单晶对单晶进行磁传输研究
机译:开发聚合物单晶以组装和功能化纳米材料。
机译:单晶拓扑绝缘体Bi的热电特性
机译:(Bi_(0.25)Sb_(0.75)_2 Te_3的高热电性能由于能带收敛而产生,并通过载流子浓度控制得到改善