Characterizations of In_zGa_(1-z)As_(1-x-y)N_xSb_y P-i-N structures grown on GaAs by molecular beam epitaxy

摘要

The GaAs-based double-heterojunction P-i-N structures using In_zGa _(1_z)As_(1-x-y)N_xSb_y as the i-layer is investigated for the first time using solid source molecular beam epitaxy. High quality coherent bulk InGaAsN_(3.45%)Sb (0.5 μm) with a lattice-mismatch of 2.6 x 10~(-3) can be achieved due to the surfactant properties of antimony, while the bulk InGaAsN_(2%) at 0.5 μm with 1.06 x 10~(-3) mismatch is fully relaxed. Rapid thermal annealing (RTA) resulted in ～25 meV low temperature (LT) photoluminescence (PL) full-width half- maxi-mums (FWHM) for the bulk InGaAsNSb layers. InGaAsNSb experiences 30% less blueshifting with subjected under the same annealing conditions as InGaAsN with similar N content. Room temperature (RT) absorption measurements are in the range of 0.9-1.4 eV. The absorption edge of 1.41 μm is achieved for sample D4.