1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy

摘要

GaAs-based double-heterojunction p-i-n photodetectors using In_zGa_(1-z)As_(1-x-y)N_xSb_y, in the Mayer are fabricated for the first time using the solid source molecular beam epitaxy growth method. A peak responsivity of ～ 0.29 A/W, corresponding to quantum efficiencies (QE) of 38% is attained from the best p-i-n device between 0.9 and 1.1 μm. The dark current is ～ 70 nA at a reverse bias of 2 Vand the cutoff wavelength reaches ～1.4 μm. The surfactant effect generated by the presence of Sb in this material allows thick high quality dilute nitride material growth. A Sb-free p-i-n device consisting of InGaAsN/GaAs is also fabricated to compare the device performance with the InGaAsNSb/GaAs p-i-n devices.