Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing

摘要

Re-distribution of Mn atoms implanted into Czochralski silicon (CzSi:Mn) and floating zone silicon (FzSi:MN) after thermal annealing between 300 and 1,000 ℃ have been investigated by secondary ion mass spectroscopic technique. The motivation behind our study comes from recent report of strong magnetic ordering up to 400 K of Mn implanted silicon samples reported by Bolduc et al. (Phys Rev B 71:033302, 2005). Our silicon substrates were implanted with 160 keV Mn~+ ion to a dose of 1 × 10~(16) cm~(-2) at either room temperature or at 340 ℃. The Mn profiles after annealing above 900 ℃ showed multiple concentration peaks for the 340 ℃ implanted samples, but not for the samples implanted at room temperature. We also carried out cross sectional TEM andrnferromagnetic resonance measurements to correlate the micro-structural and magnetization data with the Mn depth profile obtained by SIMS.