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首页> 外文期刊>Journal of materials science >Properties of RF magnetron sputtered indium tin oxide thin films on externally unheated glass substrate
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Properties of RF magnetron sputtered indium tin oxide thin films on externally unheated glass substrate

机译:外部未加热玻璃基板上射频磁控溅射铟锡氧化物薄膜的性能

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摘要

Indium tin oxide (ITO) thin films were deposited by radio frequency (RF) magnetron sputtering onto glass substrates. The transparent and conducting ITO thin films were obtained on externally unheated glass substrate, without any post-heat treatment, and by varying the deposition process parameters such as the working pressure and the RF Power. The effect of the variation of the above deposition parameters on the structural, surface morphology, electrical, and optical properties of the thin films have been studied. A minimum resistivity of 2.36 x 10~(-4) Ω cm and 80% transmittance with a figure of merit 37.2 x 10~(-3) Ω~(-1) is achieved for the thin films grown on externally unheated substrate with 75 W RF power and 0.5 mTorr working pressure.
机译:通过射频(RF)磁控溅射将氧化铟锡(ITO)薄膜沉积到玻璃基板上。在未经任何外部热处理的情况下,通过改变沉积工艺参数(例如工作压力和RF功率),在未经外部加热的玻璃基板上获得了透明且导电的ITO薄膜。研究了上述沉积参数的变化对薄膜的结构,表面形态,电学和光学性质的影响。对于在75°C的外部未加热的基板上生长的薄膜,其最小电阻率为2.36 x 10〜(-4)Ωcm,透射率为80%,品质因数为37.2 x 10〜(-3)Ω〜(-1)。射频功率和0.5 mTorr的工作压力。

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  • 来源
    《Journal of materials science 》 |2011年第8期| p.959-965| 共7页
  • 作者单位

    Applied Physics Department, Faculty of Technology & Engineering, M. S. University of Baroda, Vadodara 390001,Gujarat, India;

    Applied Physics Department, Faculty of Technology & Engineering, M. S. University of Baroda, Vadodara 390001,Gujarat, India;

    Applied Physics Department, Faculty of Technology & Engineering, M. S. University of Baroda, Vadodara 390001,Gujarat, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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