Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol-gel method

摘要

(Pb_vSr_(1_v))Zn_xTi_(1-x)O_(3-x) thin films were pre-pared on ITO/glass substrate by sol-gel process using dip-coating method. The phase structure, morphology and ferroelectric property of the thin film were studied. All the thin films show the typical perovskite phase structure. Both the crystallinity and c/a ratio of the perovskite phase increases initially and then decreases gradually with doping Zn in the thin film. Ferroelectric properties of the Zn-doped PST thin films, including ferroelectric hysteresis-loop, remnant polarization and coercive force, decrease gradu-ally with increasing Zn. And the effect of Zn on ferro-electric properties is more obvious in PST thin film with high content of Pb than that with low Pb although the high lead thin film exhibits high intrinsic ferroelectric properties.