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机译:退火时间对旋涂在玻璃基板上的BFO薄膜低温生长的影响
Department of Physics, Anna University Chennai, BIT Campus, Tiruchirappalli 620 024, India,Department of Physics, M.A.M College of Engineering, Tiruchirappalli 621 105, India;
Advanced Functional Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620 015, India;
Advanced Functional Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620 015, India;
Advanced Functional Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620 015, India;
Department of Physics, Anna University Chennai, BIT Campus, Tiruchirappalli 620 024, India;
Department of Physics, Anna University Chennai, BIT Campus, Tiruchirappalli 620 024, India;
机译:溅射铟锡氧化物的低温等离子体退火,用于玻璃和聚合物基底上的透明和导电薄膜
机译:使用ECR-PEMOCVD在覆铜玻璃基板上低温生长高度c取向的GaN膜
机译:不同类型玻璃基板上浸涂和旋涂的溶胶-凝胶TiO2薄膜的拉曼光谱
机译:铁氟龙基板上低温退火旋涂氧化锌薄膜的物理和电学特性
机译:γ辐射诱导的晶须生长涂有SN薄膜的玻璃
机译:添加锌和真空退火时间对旋涂低成本1 at%Ga–ZnO薄膜透明导电薄膜性能的影响
机译:氢退火对Si衬底上SiGe薄膜低温外延生长的影响