首页> 外文会议>2012 IEEE Symposium on Humanities, Science and Engineering Research >Physical and electrical characteristics of low-temperature annealed spin coated zinc oxide thin films on Teflon substrates
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Physical and electrical characteristics of low-temperature annealed spin coated zinc oxide thin films on Teflon substrates

机译:铁氟龙基板上低温退火旋涂氧化锌薄膜的物理和电学特性

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The structural, and electrical properties of ZnO thin films deposited by sol-gel spin coating technique, onto polytetrafluoroethylene (Teflon) and glass substrates have been investigated. 0.4M sol were prepared by using Zinc acetate dehydrate as precursor, monoethanolamine as stabilizer and 2-methoxyethanol as solvent. The thin films were annealed at 200°C, 250°C and 300°C. This annealing process was performed in every layer. Electrical characterization shows the conductivity of the films deposited onto Teflon substrates that annealed at 200°C, 250°C and 300°C were around 0.176, 0.0988, and 0.0952 S cm−1 respectively. On the other hand, for the thin films deposited on glass substrates, these values are 0.187, 0.139 and 0.126 S cm−1 for similar variation in the annealing temperature. The conductivity of the ZnO thin films on glass substrate was higher than those on Teflon substrates. FESEM images confirmed that microstructure of the thin films on both substrate consists of nanoparticles.
机译:研究了通过溶胶-凝胶旋涂技术沉积在聚四氟乙烯(Teflon)和玻璃基板上的ZnO薄膜的结构和电学性质。以醋酸锌脱水物为前驱体,单乙醇胺为稳定剂,2-甲氧基乙醇为溶剂,制备0.4M溶胶。薄膜在200℃,250℃和300℃下退火。在每一层中执行该退火工艺。电学特性表明,沉积在200°C,250°C和300°C退火的聚四氟乙烯基材上的薄膜的电导率分别约为0.176、0.0988和0.0952 S cm 。另一方面,对于退火温度类似的变化,对于沉积在玻璃基板上的薄膜,这些值为0.187、0.139和0.126S cm -1 。玻璃衬底上的ZnO薄膜的电导率高于聚四氟乙烯衬底上的ZnO薄膜的电导率。 FESEM图像证实了两个基板上的薄膜的微观结构均由纳米颗粒组成。

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