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Sputtered zinc oxide thin films deposited on polyimide substrate and annealing effect on the physical characteristics

机译:溅射沉积在聚酰亚胺衬底上的氧化锌薄膜及其退火对物理特性的影响

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摘要

Transparent, uniform and adherent ZnO thin films were obtained using radio frequency magnetron sputtering. These films were deposited onto kapton substrates with various thicknesses. Following deposition, some of the ZnO thin films were annealed at different temperatures in air. The morphological structure of ZnO thin films, annealed and as-deposited, was studied using modern methods such as: X-ray photoelectron spectroscopy, X-ray diffraction (XRD) and atomic force microscopy. It was noticed that structural and optical properties of these films depend both on the deposition conditions, annealing temperature and the nature of the used substrate. Therefore, XRD studies showed a polycrystalline structure and a hexagonal symmetry for the obtained thin films. The crystalline structure of the annealed ZnO films exhibited strong orientation along the c axis, with the (002) plane parallel to the kapton substrate. The electrical conductivity of these films, before annealing, has a value between 1.63 and 2.48 × 10~(-4) Ω~(-1) cm~(-1). The optical analyses were investigated by measuring the transmit-tance curves that were used to find the optical bandgap energy. Post-deposition annealing of the ZnO/kapton samples led to an increase in the optical bandgap from 3.19 to 324 eV, emphasizing that annealing and nature of the substrate influence the characteristics of the thin film.
机译:使用射频磁控溅射可获得透明,均匀且附着的Zn​​O薄膜。将这些膜沉积到具有各种厚度的kapton基板上。沉积后,一些ZnO薄膜在空气中在不同温度下退火。使用现代方法研究了退火和沉积态的ZnO薄膜的形态结构,例如:X射线光电子能谱,X射线衍射(XRD)和原子力显微镜。注意到这些膜的结构和光学性质取决于沉积条件,退火温度和所用基材的性质。因此,XRD研究表明所得薄膜具有多晶结构和六边形对称性。退火后的ZnO薄膜的晶体结构沿c轴显示出强取向,(002)平面平行于kapton衬底。在退火之前,这些膜的电导率的值在1.63和2.48×10〜(-4)Ω〜(-1)cm〜(-1)之间。通过测量用于找到光学带隙能量的透射率曲线来研究光学分析。 ZnO / kapton样品的沉积后退火导致光学带隙从3.19 eV增加到324 eV,强调了退火和衬底的性质会影响薄膜的特性。

著录项

  • 来源
    《Thin Solid Films》 |2013年第31期|564-570|共7页
  • 作者单位

    National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, Magurele 077125, Ilfov, Romania;

    National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, Magurele 077125, Ilfov, Romania;

    National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, Magurele 077125, Ilfov, Romania;

    National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, Magurele 077125, Ilfov, Romania;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Annealing; Crystalline structure; Electrical properties; Kapton; Thin films; Zinc oxide; Sputtering;

    机译:退火;晶体结构;电气性能;卡普顿薄膜;氧化锌溅镀;

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