机译:使用ECR-PEMOCVD在覆铜玻璃基板上低温生长高度c取向的GaN膜
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China,Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China;
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China,Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China;
New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136, China;
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China,Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050, China;
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China,Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China;
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China,Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China;
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China,Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China;
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China,Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China;
New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136, China;
A1.Cu substrates A1. low temperature A3. ECR-PEMOCVD B1. GaN films;
机译:使用ECR-PEMOCVD在玻璃基板上低温生长高度c取向的InN薄膜
机译:用低温ECR-PEMOCVD在非晶态Cu /玻璃衬底上生长高c取向的GaN晶体
机译:使用ECR-PEMOCVD在非晶态Ni /玻璃衬底上低温生长高c取向的GaN晶体
机译:ECR-PEMOCVD在不锈钢基材上沉积GaN薄膜的生长温度
机译:γ辐射诱导的晶须生长涂有SN薄膜的玻璃
机译:在高度c轴取向的Pb(Zr0.52Ti0.48)O3薄膜中具有超低应变滞后的大压电应变并且在非晶玻璃基板上呈柱状生长
机译:勘误:“使用低温生长技术在近晶格匹配的铪基板上外延生长GaN薄膜”[apL mater。 4,076104(2016)]
机译:通过液态合金的氧化在单晶和多晶衬底上合成c-取向的YbBa(sub 2)Cu(sub 3)O(sub 7-δ)薄膜