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Electrical and optical properties of reactive sputtered TiO_x thin films for uncooled IR detector applications

机译:非冷却红外探测器应用中反应溅射TiO_x薄膜的电学和光学特性

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摘要

Nanostructured titanium oxide (nano-TiO_x) thin films for uncooled IR detectors were fabricated by dc reactive magnetron sputtering and post-deposition annealed in oxygen atmosphere. The crystalline structure and surface morphology were characterized by glancing incidence X-ray diffraction (GIXRD) and field emission scanning microscopy. The results of GIXRD measurements indicate that TiO_x thin film deposited at room temperature is amorphous. A mixture of anatase and rutile nanocrystalline structure phase were present in oxygen annealed TiO_x thin film. A weak absorption peak around 438 cm~(-1) corresponding to Ti-O stretching vibration is observed by Fourier transform infrared spectroscopy with annealed TiO_x thin film. The X-ray photoelectron spectra reveals Ti~(3+) and Ti~(4+) ions are coexisting in TiO_x films. The optical spectra of the films indicate that the optical absorption edge of the nano-TiO_x film exhibits a red shift compared to the as-deposited film. Furthermore, compared to bulk TiO_x, a blue shift was observed in both of the deposited and annealed films due to quantum size effect. The dependence of resistivity on temperature reveals both the absolute value of temperature coefficient of resistivity (TCR) and activation energy of TiO_x thin film increase significantly after annealing in oxygen.
机译:通过直流反应磁控管溅射并在氧气氛中进行后沉积退火,制备了用于非冷却红外探测器的纳米结构的二氧化钛(nano-TiO_x)薄膜。晶体结构和表面形态的特征在于掠入射X射线衍射(GIXRD)和场发射扫描显微镜。 GIXRD测量的结果表明,在室温下沉积的TiO_x薄膜是非晶态的。氧退火的TiO_x薄膜中存在锐钛矿相和金红石型纳米晶结构相的混合物。通过退火的TiO_x薄膜的傅立叶变换红外光谱观察到约438 cm〜(-1)处的弱吸收峰,对应于Ti-O拉伸振动。 X射线光电子能谱表明TiO_x薄膜中Ti〜(3+)和Ti〜(4+)离子共存。薄膜的光谱表明,与刚沉积的薄膜相比,纳米TiO_x薄膜的光吸收边缘表现出红移。此外,与块状TiO_x相比,由于量子尺寸效应,在沉积和退火的膜中均观察到蓝移。电阻率对温度的依赖性揭示了在氧气中退火后TiO_x薄膜的电阻率温度系数(TCR)的绝对值和活化能均显着增加。

著录项

  • 来源
    《Journal of materials science》 |2013年第4期|1292-1297|共6页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    Faculty of Electronic and Electrical Engineering, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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