Fabrication method of high quality nano thin films for uncooled IR detectors

摘要

PURPOSE: A method for fabricating a high quality nano thin film for an infrared detecting device is provided to perform a low temperature process without an expensive ion apparatus and improve repeatability of a thin film without depositing several tens of thin films by forming a vanadium oxide nano thin film. CONSTITUTION: A sandwich-type nano thin film structure is formed in which vanadium oxide layers(10,30) are used as an upper layer and a lower layer and a metal layer(20) is used as an insertion layer. A heat treatment process is performed in an oxygen atmosphere so that the lower vanadium oxide layer is deoxidized to the metal layer so as to be a mixed phase(40) by oxygen diffusion. The metal layer is oxidized to be a mixed phase by the oxygen diffused from the surface and the lower layer, including a mixed phase of a VO2 and V2O5 phase contributing to a high temperature coefficient of resistance(TCR) value and a V2O3 phase contributing to a low resistance value.