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首页> 外文期刊>Journal of materials science >Influence of the aggregated Ag_3Sn on the improvement of electromigration phenomenon in the doped Sn58Bi solder joints
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Influence of the aggregated Ag_3Sn on the improvement of electromigration phenomenon in the doped Sn58Bi solder joints

机译:Ag_3Sn聚集体对掺杂Sn58Bi焊点电迁移现象改善的影响

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摘要

Electromigration (EM) phenomenon has become more troublesome in the Sn-Bi solder joints as the increase of current density. Doping method is reported as one of the solution to improve solder joints. However, the doped particles are easily aggregated and formed large sized intermetallic compounds (IMCs) in the solder matrix during reflow soldering. In this research, EM phenomenon was studied in the Sn57.6Bi0.4Ag, Sn58Bi with 0.4 wt% Ag doping (Sn58Bi + 0.4Ag) and Sn58Bi solder joints to fully understand the influence of the aggregated Ag_3Sn IMCs. The grain refinement effect of the Ag element was found to be the main reason of the improvement of EM phenomenon. Also, it was proved that Sn57.6Bi0.4Ag solder joints with uniformly distributed Ag_3Sn IMCs performed well in preventing the segregation of Bi phase. However, Sn58Bi + 0.4Ag solder joints with the aggregated Ag_3Sn IMCs did not perform well, forming thicker Bi rich layer at the anode. On the other hand, the addition of Ag element had minimal effect on the formation and consumption of Cu-Sn IMCs in the Sn-Bi solder joints. The thickness of Cu-Sn IMCs layer at the cathode in the Sn57.6Bi0.4Ag and Sn58Bi solder joints were found to be similar. However, the aggregated Ag_3Sn IMCs in the Sn58Bi + 0.4Ag solder joints could promote the migration of Cu-Sn IMCs to the cathode.
机译:随着电流密度的增加,Sn-Bi焊点中的电迁移(EM)现象变得更加麻烦。据报道,掺杂方法是改善焊点的一种解决方案。但是,在回流焊接过程中,掺杂的颗粒很容易在焊料基质中聚集并形成大尺寸的金属间化合物(IMC)。在这项研究中,研究了具有0.4 wt%Ag掺杂的Sn57.6Bi0.4Ag,Sn58Bi(Sn58Bi + 0.4Ag)和Sn58Bi焊点的EM现象,以​​充分了解聚集的Ag_3Sn IMC的影响。发现Ag元素的晶粒细化效果是改善EM现象的主要原因。此外,已证明具有均匀分布的Ag_3Sn IMC的Sn57.6Bi0.4Ag焊点在防止Bi相偏析方面表现良好。但是,具有聚集的Ag_3Sn IMC的Sn58Bi + 0.4Ag焊点表现不佳,在阳极处形成了较厚的富Bi层。另一方面,Ag元素的添加对Sn-Bi焊点中Cu-Sn IMC的形成和消耗的影响最小。发现Sn57.6Bi0.4Ag和Sn58Bi焊点中阴极处的Cu-Sn IMCs层的厚度相似。但是,Sn58Bi + 0.4Ag焊点中聚集的Ag_3Sn IMC可以促进Cu-Sn IMC迁移到阴极。

著录项

  • 来源
    《Journal of materials science 》 |2015年第7期| 5129-5134| 共6页
  • 作者单位

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

    Department of Material Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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