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首页> 外文期刊>Journal of materials science >Effect of annealing treatment and deposition temperature on CdS thin films for CIGS solar cells applications
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Effect of annealing treatment and deposition temperature on CdS thin films for CIGS solar cells applications

机译:退火处理和沉积温度对CIGS太阳能电池CdS薄膜的影响

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摘要

Present study expounds how post-deposition annealing affects the various structural and optical properties of CdS thin films deposited by chemical bath deposition technique. The structural and morphological changes have been observed by X-ray diffraction (XRD), field emission scanning electron microscopy, Transmission electron microscopy and atomic force microscopy studies; however, the optical and electrical properties of the as deposited and annealed films were studied by UV-Vis spectroscopy and four probe method, respectively. The energy dispersive X-ray analysis confirmed that all as-deposited and annealed films showed almost stoichiometric composition. XRD pattern of the thin films clearly shows the transformation from the cubic structure to the hexagonal structure induced by annealing. The band gaps of the as deposited films were found in the range of 2.41-2.47 eV, while after annealing it decreases due to the decomposition of hydroxides. The electrical resistivity found to decrease approximately 10 times after annealing the as-deposited CdS thin films.
机译:本研究阐述了沉积后退火如何影响通过化学浴沉积技术沉积的CdS薄膜的各种结构和光学性质。通过X射线衍射(XRD),场发射扫描电子显微镜,透射电子显微镜和原子力显微镜研究已经观察到结构和形态变化。然而,分别通过紫外-可见光谱和四探针法研究了沉积和退火薄膜的光学和电学性质。能量色散X射线分析证实,所有沉积和退火的膜都显示出几乎化学计量的组成。薄膜的XRD图清楚地表明了退火引起的从立方结构到六方结构的转变。发现所沉积的膜的带隙在2.41-2.47eV的范围内,而在退火之后,其由于氢氧化物的分解而减小。在将沉积的CdS薄膜退火之后,发现电阻率降低了大约10倍。

著录项

  • 来源
    《Journal of materials science》 |2016年第8期|7890-7898|共9页
  • 作者单位

    Department of Applied Physics, Amity Institute of Applied Sciences (AIAS), Amity University, Noida Campus, Sector-125, Noida, U.P. 201 313, India;

    Department of Applied Physics, Defence Institute of Advanced Technology, Girinagar, Pune 411025, India;

    Department of Applied Physics, Defence Institute of Advanced Technology, Girinagar, Pune 411025, India;

    Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100715, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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