Fabrication and characterization of p-type In-N codoped ZnMgO films

摘要

Indium (In) and nitrogen (N) codoped ZnMgO films (ZnMgO:In-N) were fabricated on quartz substrates by radio frequency magnetron sputtering and ion-implantation technique. p-ZnMgO:In-N films were successfully achieved after post-implantation annealing at an appropriate temperature ranging from 570 to 590 ℃. X-ray diffraction (XRD) indicates that severe damage in films is introduced by N ion implantation and the damaged lattice can be partially recovered after post-implantation annealing. The analysis of Raman spectroscopy and X-ray photoelec-tron spectroscopy (XPS) demonstrates that post-implantation annealing can promote a reduction of donor type zinc interstitials (Zn_i) and the formation of In_(Zn)+2N_O acceptor complex, which mainly contribute to the realization of p-type ZnMgO:In-N films.