FABRICATION METHOD FOR P-TYPE ZINC OXIDE THIN FILMS BY ATOMIC LAYER DEPOSITION

摘要

A method for manufacturing a P type zinc oxide thin film is provided to improve optical, structural and electrical characteristics by forming the zinc oxide thin film using an ALD(Atomic Layer Deposition) and performing a heat treatment process on the zinc oxide thin film. First species containing zinc are deposited on a substrate by supplying a zinc source. Second species containing oxygen are deposited on the first species by supplying an oxygen source onto the resultant structure. The resultant structure is doped with third species containing nitrogen by supplying a nitrogen source as a dopant source. A post-heat treatment process is performed on the resultant structure under oxygen gas atmosphere to form a hole thereon.