Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature

摘要

The electrical properties and current-conduction/transport mechanism of Al/(%7 Zn-doped PVA)/p-Si (MPS) structure was investigated by current-voltage (Ⅰ-Ⅴ), capacitance-voltage (C-V) and conductance-voltage (G/co-V) measurements at room temperature. The energy dependent profile of surface states (N_(ss)) was obtained by taking into account voltage dependent effective barrier height (Ф_e), ideality factor (n) and series resistance (R_s) of the structure. Voltage dependent profile of resistivity (R_i) and some main electrical parameters such as reverse saturation current (I_0), ideality factor (n) and zero-bias barrier height (Ф_(Bo)) were also evaluated from the forward bias Ⅰ-Ⅴ data. Experimental results reveal that the fabricated MPS structure has a higher rectification ratio with low reverse leakage current. The double logarithmic Ⅰ-Ⅴ plot was drawn and it shows a power-law behavior of the current (Ⅰ-∝ Ⅴ~m), The forward and reverse bias C-V and G/ω-V measurements were carried out at enough high frequency (1 MHz) and then to eliminate of the R_s the measured C-V and G/ω-V plots were corrected. The C-V and G/ω-V plots exhibit inductive behavior at accumulation region due to the effect of N_(ss) and R_s. The other some electrical parameters such as concentration of acceptor atoms (N_A) and barrier height (Ф_B) were also obtained from the slope and intercept of reverse bias C~(-2) vs V plot. Further, both the forward and reverse bias conduction mechanisms of the MPS structure are also discussed compare with the literature.