Reduced high temperature dielectric loss in BSB glass modified Ba_(0.3)Sr_(0.7)TiO_3 ceramics for energy storage

摘要

AbstractB2O3–SiO2–Bi2O3–CaO–BaO glass was used to lower the sintering temperature of paraelectric Ba0.3Sr0.7TiO3ceramics. The effect of B2O3–SiO2–Bi2O3–CaO–BaO glass doping amount on the structure, dielectric properties and energy storage characteristics of the ceramics was investigated. Due to the doping of glass, the room temperature dielectric constant of the ceramics was gradually decreased from 650 to 380 (@ 1 kHz), while the electrical breakdown strength enhanced by > 20%. Especially, the dielectric loss of the ceramics at high temperatures (> 150 °C) was strongly reduced after glass doping. At the measuring temperature of 200 °C, the dielectric loss of glass doped Ba0.3Sr0.7TiO3ceramics (tanδ < 3%) was markedly lower than that of pure Ba0.3Sr0.7TiO3one (tanδ > 25%). The ceramics with glass doping amount of 2.0 wt.% sintered at a lowered temperature of 1150 °C, possessing a relatively high energy storage density (γ = 0.47 J/cm3) and efficiency (η = 90.3%) under an applied electric field of 135 kV/cm, should be promising for solid state compact pulsed power electronics at elevated temperatures.