Effects of electron beam current on microstructure and luminescent properties of Y_2O_3:Eu~(3+) thin film grown on quartz fabric by electron beam evaporation

摘要

Thin films of yttrium oxide phosphor doped with trivalent europium ion (Y2O3:Eu3+) are grown on a quartz fabric substrate by using electron beam evaporation with different electron beam currents from 80 to 170 mA. The dependence of morphological structure, crystal structure, luminescent properties and chromaticity coordinates of Y2O3:Eu3+ thin films on the electron beam current is thoroughly analyzed. The experimental results show that the thickness of the films is significantly increased from 0.69 to 1.68 A mu m when the deposition current is increased from 110 to 170 mA. Improvements in the surface morphological components, such as spherical-shaped particles and a more dense topography, can be found when the films are deposited with a current of 140 mA. The predominant orientation of the Y2O3:Eu3+ thin films transforms from the (400) to (222) crystal face when the current is increased from 110 to 140-170 mA. The maximum crystallinity of the films occurs when the deposition current is used at 140 mA. The luminescent spectra results indicate that the improved morphology, inceased film thickness and enhanced crystallinity can contribute to the better luminescent properties of the Y2O3:Eu3+ thin films. The highest emission brightness is obtained when the Y2O3:Eu3+ thin films are prepared with a deposition current of 140 mA, and the luminescent intensity is increased by 6317% when the deposition current is increased from 80 to 140 mA.