ZnO based transparent thin film transistor grown by aerosol assisted CVD

摘要

The communication reports the characterization of n $$^+$$ + -Al:ZnO/Al $$_2$$ 2 O $$_3$$ 3 -ZnO thin film transistors (TFTs) developed by using an indigenously designed low-cost aerosol assisted chemical vapour deposition (AACVD) system. UV–VIS spectroscopy yields the bandgap energies of ZnO and Al:ZnO thin films as 3.30 and 3.34 eV, respectively. The average optical transmittance of the TFT is found to be around 77%. The TFT has a double top gate structure with Al:ZnO thin film as gate, source and drain terminals, ZnO thin film as channel layer while Al $$_2$$ 2 O $$_3$$ 3 acts as the dielectric layer. Transfer and output characteristics of the TFT have been measured to study the variation of threshold voltage, current On/Off ratio, saturation field effect mobility and subthreshold swing parameters as functions of drain-to-source voltage. The present work establishes the good quality indigenous fabrication of p-channel TFT using AACVD system with results agreeing very well with the results available in the literature.