Raman scattering of cubic boron nitride films deposited from the low-pressure gas phase

摘要

By introduction of the chemical effects of fluorine, thick cubic boron nitride(cBN) films with high phase purity and low residual stress were synthesized on silicon substrates by dc-bias-assisted dc jet chemical vapor deposition in an Ar-N_2-BF_3-H_2 system. In this paper, the characterization of the films by scanning electron microscopy, glancing-angle x-ray diffraction, infrared spectroscopy, and Raman spectroscopy was done. Among th4ese techniques, Raman spectroscopy was intensively studied, and a method was established to evaluate the crystallinity and residual stress of the cBN films from the line width and peak shift of Raman characteristic peaks.