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机译:晶粒结构对带CoWP封盖的Cu互连件电迁移可靠性的影响
Laboratory for Interconnect and Packaging, Microelectronics Research Center PRC/MER,The University of Texas at Austin, Austin, Texas 78712;
Laboratory for Interconnect and Packaging, Microelectronics Research Center PRC/MER,The University of Texas at Austin, Austin, Texas 78712;
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, 01109 Dresden, Germany;
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, 01109 Dresden, Germany;
Fraunhofer Institute for Non-Destructive Testing IZFP, Dresden, Germany;
机译:热处理可提高带帽铜互连线的电迁移寿命
机译:纳米Cu互连件的晶粒结构分析及其对电迁移可靠性的影响
机译:纳米Cu互连件的晶粒结构分析及其对电迁移可靠性的影响
机译:CoWP盖厚度对仅使用CoWP盖工艺的Cu互连的通孔良率和可靠性的影响
机译:Al(Cu)互连中电迁移可靠性的研究。
机译:SN-3.0AG-0.5CU焊点电迁移诱导的晶粒旋转和微观结构演化的原位观察
机译:晶粒尺寸和覆盖层对Cu互连电迁移可靠性的影响:实验和模拟