机译:H_2等离子体处理对a-IGZO薄膜晶体管的影响研究
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;
Department of Materials Science & Engineering, Ajou University, Woncheon-Dong, Yeongtong-Gu, Suwon 443-739, Korea;
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;
机译:通过CF_4 / O_2等离子处理提高柔性a-IGZO薄膜晶体管的接触电阻
机译:氧等离子体处理对固溶a-IGZO薄膜晶体管器件性能的影响
机译:钇掺杂对用作薄膜晶体管沟道层的a-IGZO薄膜的影响
机译:应力控制a-IGZO薄膜的表征及其在薄膜晶体管和微机电系统工艺中的应用
机译:氧化锌薄膜的等离子体处理和使用该氧化锌薄膜的温度感应
机译:电子束沉积栅极电介质对a-IGZO薄膜晶体管的沟道宽度相关性能和可靠性的比较研究
机译:通过CF4 / O2等离子体处理改善柔性A-IGZO薄膜晶体管中的接触电阻