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Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment

机译：通过CF4 / O2等离子体处理改善柔性A-IGZO薄膜晶体管中的接触电阻

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S. Knobelspies; A. Takabayashi; A. Daus; G. Cantarella; N. Münzenrieder; G. Tröster;
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1. Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF_4/O_2 plasma treatment [J] . Knobelspies S., Takabayashi A., Daus A., Solid-State Electronics . 2018,第DECa期

机译：通过CF_4 / O_2等离子处理提高柔性a-IGZO薄膜晶体管的接触电阻
2. Systematic investigation on the effect of contact resistance on the performance of a-IGZO thin-film transistors with various geometries of electrodes [J] . Jae Sang Lee, Seongpil Chang, Houcine Bouzid, Physica status solidi . 2010,第7期

机译：系统研究接触电阻对不同几何形状电极的a-IGZO薄膜晶体管性能的影响
3. Reduced contact resistance and highly stable operation in polymer thin-film transistor with aqueous MoO_x solution contact treatment [J] . Daisuke Kumaki, Yoshihide Fujisaki, Shizuo Tokito Organic Electronics . 2013,第2期

机译：采用MoO_x水溶液接触处理的聚合物薄膜晶体管降低了接触电阻并实现了高度稳定的操作
4. Improvement in environmental reliability of amorphous indium-gallium-zinc-oxide thin-film transistors by CF4 plasma treatment [C] . Fan-Ping Tseng, Ching-Lin Fan International Conference on Optical MEMS and Nanophotonics . 2016

机译：CF4等离子体处理提高非晶铟镓锌氧化物薄膜晶体管的环境可靠性
5. Contact resistance and hole mobility in pentacene thin-film transistors. [D] . Pesavento, Paul Valentine. 2005

机译：并五苯薄膜晶体管的接触电阻和空穴迁移率。
6. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment [O] . Ching-Lin Fan, Fan-Ping Tseng, Chiao-Yuan Tseng 2018

机译：CF4等离子体处理HfO2栅电介质的非晶铟镓锌氧化物薄膜晶体管的电性能和可靠性提高
7. Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation [O] . Munzenrieder Niko, Salvatore Giovanni A, Petti Luisa, 2014

机译：用于100 mHz以上工作的柔性亚微米长氧化物薄膜晶体管的接触电阻和重叠电容

Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment

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