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机译:(100)Si衬底上异质外延3C-SiC薄膜的应力特性研究
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy;
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy;
Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620;
Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620;
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy;
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy;
Department of Mechanical Engineering, University of South Florida Tampa, Florida 33620;
Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 Department of Molecular Pharmacology and Physiology, University of South Florida, Tampa, Florida 33620;
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy;
机译:使用六甲基二硅烷单源前驱体通过APCVD在Si(100)衬底上异质外延生长单3C-SiC薄膜
机译:通过APCVD使用六甲基二硅烷的单源前体对Si(100)基底上的单一3C-SiC薄膜的异质生长
机译:使用单甲基硅烷通过等离子化学气相沉积在Si(100)衬底上异质外延生长3C-SiC膜
机译:通过单源化学气相沉积在MEMS(Si)(100)衬底上异质外延生长3C-SiC薄膜
机译:在r面蓝宝石衬底上生长异质外延单晶铌酸铅镁钛酸铅薄膜。
机译:Si(111)衬底上异质外延生长3C-SiC的动力学表面粗糙化和晶圆弯曲控制
机译:(100)si衬底上异质外延3C-siC薄膜的应力自然研究
机译:siC衬底上生长的外延3C-siC,4H-siC和6H-siC薄膜缺陷的研究