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机译:低维金属卤化物的综述:气相外延和物理性质
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming City, Yunnan Province 650093, China;
Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
机译:通过液相外延,气相外延和金属有机化学气相沉积法生长的GaxIn1-xAs(0.44≪x≪0.49)的光学和晶体学性质以及杂质掺入
机译:使用GaCl_3通过三卤化物气相外延在三维SCAAT™体晶上生长GaN。
机译:使用Gaci_3通过三卤化气相外延对三维Scaat™散装种子的GaN的生长
机译:金属 - 有机气相外延,气源分子束外延和卤化物气相外延生长GaN的对比光学特征
机译:通过低压金属有机气相外延生长以及氮化镓和氮化铟镓薄膜的表面特性。
机译:二维过渡金属二卤化物上加氢控制的相变及其独特的物理和催化性能
机译:卤化物气相外延在基底平面蓝宝石基板上生长的薄α-GA2O3薄膜的电性能,结构性能和深阱光谱