Hydride vapor phase epitaxy process for the production of aluminum-gallium-nitrogen monocrystals useful in laser diode, comprises converting mixture of aluminum, gallium and indium metals having hydrogen compounds of halogens to halides

摘要

The hydride vapor phase epitaxy process for the production of aluminum-gallium-nitrogen monocrystals useful in blue, white and green LEDs, comprises converting a mixture of aluminum, gallium and indium metals having hydrogen compounds of the halogens to aluminum, gallium or indium halides at 800-900[deg] C, supplying the hydrogen compounds of the elements of the Vth main group of the elements of the periodic system, converting the formed halides having the hydrogen compounds at a substrate to aluminum-gallium-nitrogen at 1020-1070[deg] C and then depositing on to the substrate. The hydride vapor phase epitaxy process for the production of aluminum-gallium-nitrogen monocrystals useful in blue, white and green LEDs, comprises converting a mixture of aluminum, gallium and indium metals having hydrogen compounds of the halogens to aluminum, gallium or indium halides at 800-900[deg] C, supplying the hydrogen compounds of the elements of the Vth main group of the elements of the periodic system, converting the formed halides having the hydrogen compounds at a substrate to aluminum-gallium-nitrogen at 1020-1070[deg] C and then depositing on to the substrate, deriving the surplus educt and the formed gaseous waste product, and submitting the mixture of aluminum and/or gallium and indium in a separate crucible. The molar ratio of the indium/gallium and/or aluminum at the source is up to 1 x 10-6. The metals are blended, largely homogenized and mixed in the melt before converting the metal mixtures. Independent claims are included for: (1) aluminum-gallium-nitrogen monocrystals with a defect density of 1 x 107 per cm2 and an indium-content of less than 2 x 1016 at/cm3 obtainable by a hydride vapor phase epitaxy process; and (2) module for blue, white and green LEDs, laser diode and high speed-, high temperature- and high frequency field effect transistors.