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The effect of Ce doping on the structure, surface morphology and magnetic properties of Dy doped-yttrium iron garnet films prepared by a sol-gel method

机译:Ce掺杂对溶胶-凝胶法制备的Dy掺杂钇铁石榴石薄膜结构,表面形貌和磁性的影响

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Cerium substitute Y_(2.8-x)Dy_(0.2)Ce_xFe_5O_(12) (x=0, 0.2, 0.25, 0.3, 0.35) films have been prepared on quartz substrates by a simple sol-gel method and followed by a spin-coating technique. The crystalline structures, surface and magnetic properties of the films has been investigated by an X-ray diffractometer (XRD), a field emission scanning electron microscope (FESEM), an atomic force microscope (AFM) and a vibrating sample magnetometer (VSM). The XRD analysis revealed that the films have garnet structure. The lattice parameter increased as Ce content was increased up to 0.25 due to the Ce~(3+) ions completely substituted for Y~(3+) ions. For films x ≥ 0.3, the lattice parameter decreased. The FESEM results showed that the average grains were small, ranging from 11 to 14 nm and the thickness of films increased with the increment of Ce contents. VSM results for both in and out-plane magnetic measurement showed the film with x=0 has the highest saturation magnetization (M_s) values. With the increment of Ce contents, the Ms of films decreased due to the substitution of Ce~(3+), Dy~(3+) ions in the c-site. For films x ≥ 0.3 the reduction of M_s values was due to the presence of CeO_2 in the film. The films with x=0-0.25 exhibited increases in H_c values. The improvement of coercivity value, small grain size and high crystalline structure of film with x=0.25 has a potential to be used in magneto optical (MO) memory storage applications.
机译:通过简单的溶胶-凝胶法在石英衬底上制备了铈替代物Y_(2.8-x)Dy_(0.2)Ce_xFe_5O_(12)(x = 0,0.2,0.25,0.3,0.35)膜,然后旋涂技术。薄膜的晶体结构,表面和磁性已经通过X射线衍射仪(XRD),场发射扫描电子显微镜(FESEM),原子力显微镜(AFM)和振动样品磁力仪(VSM)进行了研究。 XRD分析表明该膜具有石榴石结构。随着Ce〜(3+)离子完全取代Y〜(3+)离子,随着Ce含量增加到0.25,晶格参数增加。对于x≥0.3的胶片,晶格参数降低。 FESEM结果表明,平均晶粒很小,范围为11至14 nm,并且随着Ce含量的增加,薄膜的厚度增加。 VSM的内外平面磁测量结果表明,x = 0的薄膜具有最高的饱和磁化强度(M_s)值。随着Ce含量的增加,薄膜的Ms由于c位中Ce〜(3 +),Dy〜(3+)离子的取代而降低。对于x≥0.3的薄膜,M_s值的降低是由于薄膜中存在CeO_2。 x = 0-0.25的膜表现出H_c值的增加。 x = 0.25的薄膜的矫顽力值,小晶粒尺寸和高晶体结构的改进具有用于磁光(MO)存储器存储应用的潜力。

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