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Effect of heat treatment and spacer layer driven interlayer coupling in laminated type FeTaC thin films

机译:叠层式FeTaC薄膜的热处理和间隔层驱动的层间耦合的影响

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We report systematic studies on the effect of heat treatment and spacer layer thickness (x) on structural and temperature dependent magnetic properties of laminated [FeTaC (50 nm)/Ta (x nm)]_3/FeTaC (50 nm) thin films. All the films were deposited directly on oxidized Si substrate using magnetron sputtering technique at ambient temperature and post annealed at different temperatures. As-deposited films and the films annealed at 200 ℃ exhibit amorphous structure. With increasing annealing temperature (T_A), nucleation of α-Fe nanocrystals at 300 ℃ and well grown α-Fe nanocrystals at 400 ℃ were observed. The shape of room temperature magnetic hysteresis (M-H) loops and the magnetization reversal behavior of individual FeTaC layer in the laminated films depend strongly on T_A and x. Coercivity (H_C) decreases largely from 24 Oe for as-deposited single layer film to 0.02 Oe for the multilayer films annealed at 200 ℃, but increases with the further increase in T_A. M-H loops measured at different temperatures reveal strong temperature dependent multistep magnetization reversal process, where the number, nature and position of the steps in the M-H loops essentially vary with temperature, x and T_A. This results unusual variation of H_C with temperature and exhibit a broad minimum in H_C(T) curve for the films annealed at 300 ℃. The minimum point in H_C(T) curve depends on × and shifts to lower temperature with increasing x. On the other hand, high temperature thermomagnetization data show a strong (significant) variation of Curie temperature with T_A (x). The observed results are discussed on the basis of variation in interlayer couplings with respect to x, T_A, and temperature driven structural and interfacial properties.
机译:我们报告了热处理和间隔层厚度(x)对叠层[FeTaC(50 nm)/ Ta(x nm)] _ 3 / FeTaC(50 nm)薄膜的结构和温度相关磁性能的影响的系统研究。在室温下,使用磁控溅射技术将所有膜直接沉积在氧化的Si衬底上,并在不同温度下进行后退火。沉积的薄膜和在200℃退火的薄膜呈现出非晶结构。随着退火温度(T_A)的升高,观察到300℃时α-Fe纳米晶成核,而在400℃时生长良好的α-Fe纳米晶。室温磁滞回线(M-H)的形状和叠层膜中各个FeTaC层的磁化反转行为在很大程度上取决于T_A和x。矫顽力(H_C)从最初沉积的单层薄膜的24 Oe降低到200℃退火的多层薄膜的0.02 Oe,但随着T_A的进一步增加而增加。在不同温度下测量的M-H回路显示出强烈的温度依赖性多步磁化反转过程,其中M-H回路中的步数,性质和位置基本上随温度x和T_A变化。这导致了H_C随温度的异常变化,并且在300℃退火后的薄膜中H_C(T)曲线显示出极小的最小值。 H_C(T)曲线中的最小点取决于x,并且随着x的增加而移至较低的温度。另一方面,高温热磁化数据显示居里温度随T_A(x)的变化很大(很大)。基于x,T_A以及温度驱动的结构和界面特性的层间耦合变化,讨论了观察到的结果。

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